 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| (R) STB80NE03L-06 N - CHANNEL 30V - 0.005 - 80A - D2PAK STripFETTM POWER MOSFET T YPE ST B80NE03L-06 s s s s s V DSS 30 V R DS(o n) < 0.006 ID 80 A s TYPICAL RDS(on) = 0.005 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE 3 1 DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature SizeTM " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc. ) ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID IDM (*) P t ot dv/dt T stg Tj July 1998 Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating F actor Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junction Temperature o o o D2PAK TO-263 (suffix "T4") INTERNAL SCHEMATIC DIAGRAM Value 30 30 22 80 60 320 150 1 7 -65 to 175 175 (1) ISD 80 A, di/dt 300 A/s, VDD V(BR)DSS, Tj TJMAX Uni t V V V A A A W W/ C V/ ns o o o C C 1/8 (*) Pulse width limited by safe operating area STB80NE03L-06 THERMAL DATA R t hj-ca se Rthj -amb R thc- si nk Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 1 62.5 0.5 300 C/W oC/W o C/W o C o AVALANCHE CHARACTERISTICS Symb ol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, < 1%) Single Pulse Avalanche Energy (starting Tj = 25 o C, I D = IAR , VDD = 15 V) Max Valu e 80 600 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symb ol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Cond ition s I D = 250 A V GS = 0 Min. 30 1 10 100 Typ . Max. Un it V A A nA Zero G ate Voltage V DS = Max Rating Drain Current (VGS = 0) V DS = Max Rating Gate-body Leakage Current (V DS = 0) V GS = 15 V T c =125 oC ON () Symb ol V GS(th) R DS( on) ID(o n) Parameter Gate Threshold Voltage V DS = VGS Test Cond ition s ID = 250 A ID = 40 A ID = 40 A 80 Min. 1 Typ . 1.7 0.005 Max. 2.5 0.006 0.008 Un it V A Static Drain-source On V GS = 10V Resistance V GS = 5V On State Drain Current V DS > I D(on) x R DS(on) max V GS = 10 V DYNAMIC Symb ol g fs () C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse T ransfer Capacitance Test Cond ition s V DS > I D(on) x R DS(on) max V DS = 25 V f = 1 MHz I D =40 A VGS = 0 Min. 30 Typ . 50 6500 1500 500 8700 2000 700 Max. Un it S pF pF pF 2/8 STB80NE03L-06 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol t d(on) tr Qg Q gs Q gd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Cond ition s V DD = 15 V ID = 40 A V GS = 5 V R G =4.7 (see test circuit, figure 3) V DD = 24 V I D = 80 A V GS = 5 V Min. Typ . 40 260 95 30 44 Max. 55 350 130 Un it ns ns nC nC nC SWITCHING OFF Symb ol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Cond ition s V DD = 24 V I D = 80 A R G =4.7 VGS = 5 V (see test circuit, figure 5) Min. Typ . 70 165 250 Max. 95 220 340 Un it ns ns ns SOURCE DRAIN DIODE Symb ol I SD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 80 A V GS = 0 75 0.14 4 Test Cond ition s Min. Typ . Max. 80 320 1.5 Un it A A V ns C A di/dt = 100 A/s I SD = 80 A o Tj = 150 C V DD = 15 V (see test circuit, figure 5) () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area Safe Operating Area for Thermal Impedance 3/8 STB80NE03L-06 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STB80NE03L-06 Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STB80NE03L-06 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STB80NE03L-06 TO-263 (D2PAK) MECHANICAL DATA mm MIN. A A1 B B2 C C2 D E G L L2 L3 4.3 2.49 0.7 1.25 0.45 1.21 8.95 10 4.88 15 1.27 1.4 TYP. MAX. 4.6 2.69 0.93 1.4 0.6 1.36 9.35 10.28 5.28 15.85 1.4 1.75 MIN. 0.169 0.098 0.027 0.049 0.017 0.047 0.352 0.393 0.192 0.590 0.050 0.055 inch TYP. MAX. 0.181 0.106 0.036 0.055 0.023 0.053 0.368 0.404 0.208 0.624 0.055 0.068 DIM. E C2 L2 A D L L3 B2 B G A1 C P011P6/C 7/8 STB80NE03L-06 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. . 8/8 |
Price & Availability of STB80NE03L-06
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |